2SD1628G-TD-E Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 2V.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.When VCE saturation is 500mV @ 60mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.The breakdown input voltage is 20V volts.A maximum collector current of 5A volts can be achieved.

2SD1628G-TD-E Features

the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V

2SD1628G-TD-E Applications

There are a lot of ON Semiconductor 2SD1628G-TD-E applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface