2SD1685G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 280 @ 500mA 2V.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 60mA, 3A.With the emitter base voltage set at 6V, an efficient operation can be achieved.120MHz is present in the transition frequency.During maximum operation, collector current can be as low as 5A volts.

2SD1685G Features

the DC current gain for this device is 280 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 120MHz

2SD1685G Applications

There are a lot of ON Semiconductor 2SD1685G applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface