DSA5001S0L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Panasonic Electronic Components stock available on our website
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DSA5001S0L Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-85
Number of Pins
85
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
DSA5001
JESD-30 Code
R-PDSO-F3
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
290 @ 2mA 10V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Max Frequency
150MHz
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-7V
hFE Min
210
Continuous Collector Current
-100mA
Height
800μm
Length
2mm
Width
1.25mm
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.07726
$0.23178
6,000
$0.07026
$0.42156
15,000
$0.06327
$0.94905
30,000
$0.05977
$1.7931
75,000
$0.05395
$4.04625
DSA5001S0L Product Details
DSA5001S0L Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 290 @ 2mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 10mA, 100mA.Continuous collector voltages should be kept at -100mA to achieve high efficiency.Keeping the emitter base voltage at -7V can result in a high level of efficiency.There is a transition frequency of 150MHz in the part.This device can take an input voltage of 50V volts before it breaks down.In extreme cases, the collector current can be as low as 100mA volts.
DSA5001S0L Features
the DC current gain for this device is 290 @ 2mA 10V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 10mA, 100mA the emitter base voltage is kept at -7V a transition frequency of 150MHz
DSA5001S0L Applications
There are a lot of Panasonic Electronic Components DSA5001S0L applications of single BJT transistors.