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BAS16HT1G

BAS16HT1G

BAS16HT1G

ON Semiconductor

BAS16HT1G datasheet pdf and Diodes - Rectifiers - Single product details from ON Semiconductor stock available on our website

SOT-23

BAS16HT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Number of Pins 2
Weight 33mg
Diode Element Material SILICON
PackagingCut Tape (CT)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature150°C
Min Operating Temperature -55°C
HTS Code8541.10.00.70
Capacitance 2pF
Subcategory Rectifier Diodes
Voltage - Rated DC 75V
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating200mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BAS16H
Pin Count2
Number of Elements 1
Element ConfigurationSingle
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 1μA @ 100V
Power Dissipation200mW
Output Current200mA
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Forward Current200mA
Max Reverse Leakage Current 1μA
Operating Temperature - Junction -55°C~150°C
Max Surge Current600mA
Breakdown Voltage75V
Current - Average Rectified (Io) 200mA DC
Forward Voltage1.25V
Max Reverse Voltage (DC) 100V
Average Rectified Current200mA
Reverse Recovery Time 6 ns
Peak Reverse Current1μA
Max Repetitive Reverse Voltage (Vrrm) 85V
Capacitance @ Vr, F 2pF @ 0V 1MHz
Peak Non-Repetitive Surge Current 600mA
Reverse Voltage85V
Max Forward Surge Current (Ifsm) 500mA
Recovery Time 6 ns
Height 900μm
Length 1.7mm
Width 1.25mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:45243 items

Pricing & Ordering

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BAS16HT1G Product Details

BAS16HT1G Overview


An acceptable reverse voltage would be 85V.A reverse leakage current of 1μA volts can be generated by this device.In this device, there is an average rectified current of 200mA volts.An unwanted consequence of the primary action of this electronic or electrical device is the production of 200mW heat.The allowable value of forward current reaches 200mA.200mA is its maximum current rating, which is the maximum current that a fuse can handle without deteriorating.This is the maximum amount of 600mA surge current that can be used.A value of 2pF can be delivered by the device depending on its capacitance.As the data chart indicates, the peak reverse is 1μA.In diodes, the breakdown voltage is defined as the largest reverse voltage that can be applied without increasing the leakage current exponentially, and its breakdown voltage is 75V.

BAS16HT1G Features


a maximal reverse leakage current of 1μA volts
an average rectified current of 200mA volts
a current rating of 200mA
the peak reverse is 1μA
the breakdown voltage of a diode is 75V

BAS16HT1G Applications


There are a lot of ON Semiconductor BAS16HT1G applications of single-phase diode rectifier.

  • Polarity Protection Diode
  • Freewheeling
  • Ultra High-Speed Switching
  • Reverse Polarity Protection
  • Power converters
  • DC motor control and drives
  • Recirculating Diode
  • Switching Diode
  • Battery chargers
  • Welders

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