BC32740BU Overview

In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of -700mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Emitter base voltages of -5V can achieve high levels of efficiency.The current rating of this fuse is -800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 100MHz.There is a breakdown input voltage of 60V volts that it can take.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.

BC32740BU Features

the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 100MHz

BC32740BU Applications

There are a lot of ON Semiconductor BC32740BU applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter