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2N4124G

2N4124G

2N4124G

Rochester Electronics, LLC

2N4124G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N4124G Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish NOT SPECIFIED
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 200mA
Transition Frequency 300MHz
Frequency - Transition 300MHz
RoHS Status ROHS3 Compliant
2N4124G Product Details

2N4124G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 50mA.In this part, there is a transition frequency of 300MHz.There is a 25V maximal voltage in the device due to collector-emitter breakdown.

2N4124G Features


the DC current gain for this device is 120 @ 2mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
a transition frequency of 300MHz

2N4124G Applications


There are a lot of Rochester Electronics, LLC 2N4124G applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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