KSP56TA

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Manufacturer part number:KSP56TA

Manufacturer:ON Semiconductor

Description:KSP56TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:KSP56TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature	150°C TJ
Packaging	Tape & Box (TB)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Reach Compliance Code	compliant
Power - Max	625mW
Transistor Type	PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA 1V
Current - Collector Cutoff (Max)	100nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	500mA
Frequency - Transition	50MHz

Quantity	Unit Price	Ext. Price
1	$5.304134	$5.304134
10	$5.003900	$50.039
100	$4.720659	$472.0659
500	$4.453453	$2226.7265
1000	$4.201370	$4201.37

KSP56TA Overview

In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.There is a 80V maximal voltage in the device due to collector-emitter breakdown.