BC517RL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC517RL1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
EUROPEAN PART NUMBER
Subcategory
Other Transistors
Voltage - Rated DC
30V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
BC517
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30000 @ 20mA 2V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
1V
Frequency - Transition
200MHz
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
10V
hFE Min
30000
Continuous Collector Current
1A
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.410771
$0.410771
10
$0.387520
$3.8752
100
$0.365585
$36.5585
500
$0.344891
$172.4455
1000
$0.325369
$325.369
BC517RL1 Product Details
BC517RL1 Overview
This device has a DC current gain of 30000 @ 20mA 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 100μA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.200MHz is present in the transition frequency.When collector current reaches its maximum, it can reach 1A volts.
BC517RL1 Features
the DC current gain for this device is 30000 @ 20mA 2V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 100μA, 100mA the emitter base voltage is kept at 10V the current rating of this device is 1A a transition frequency of 200MHz
BC517RL1 Applications
There are a lot of ON Semiconductor BC517RL1 applications of single BJT transistors.