MMBT2222LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT2222LT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 3 days ago)
Package / Case
SOT-23-3
Number of Pins
3
Packaging
Cut Tape (CT)
Published
2007
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
30V
Max Power Dissipation
300mW
Current Rating
600mA
Polarity
NPN
Element Configuration
Single
Gain Bandwidth Product
250MHz
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
600mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
1.6V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
35
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MMBT2222LT1 Product Details
MMBT2222LT1 Overview
Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.6V.An emitter's base voltage can be kept at 5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 250MHz.In extreme cases, the collector current can be as low as 600mA volts.
MMBT2222LT1 Features
a collector emitter saturation voltage of 1.6V the emitter base voltage is kept at 5V the current rating of this device is 600mA a transition frequency of 250MHz
MMBT2222LT1 Applications
There are a lot of ON Semiconductor MMBT2222LT1 applications of single BJT transistors.