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MMBT2222LT1

MMBT2222LT1

MMBT2222LT1

ON Semiconductor

MMBT2222LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT2222LT1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Package / Case SOT-23-3
Number of Pins 3
PackagingCut Tape (CT)
Published 2007
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Max Power Dissipation300mW
Current Rating600mA
Polarity NPN
Element ConfigurationSingle
Gain Bandwidth Product250MHz
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 600mA
Collector Emitter Breakdown Voltage30V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage1.6V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 35
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1915 items

MMBT2222LT1 Product Details

MMBT2222LT1 Overview


Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.6V.An emitter's base voltage can be kept at 5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 250MHz.In extreme cases, the collector current can be as low as 600mA volts.

MMBT2222LT1 Features


a collector emitter saturation voltage of 1.6V
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 250MHz

MMBT2222LT1 Applications


There are a lot of ON Semiconductor MMBT2222LT1 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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