KSA1010RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA1010RTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSA1010
Power - Max
1.5W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 3A 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
7A
KSA1010RTU Product Details
KSA1010RTU Overview
This device has a DC current gain of 40 @ 3A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 500mA, 5A means Ic has reached its maximum value(saturated).There is no device package available from the supplier for this product.Detection of Collector Emitter Breakdown at 100V maximal voltage is present.
KSA1010RTU Features
the DC current gain for this device is 40 @ 3A 5V the vce saturation(Max) is 600mV @ 500mA, 5A the supplier device package of TO-220-3
KSA1010RTU Applications
There are a lot of ON Semiconductor KSA1010RTU applications of single BJT transistors.