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KSA1010RTU

KSA1010RTU

KSA1010RTU

ON Semiconductor

KSA1010RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA1010RTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSA1010
Power - Max 1.5W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 3A 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 7A
KSA1010RTU Product Details

KSA1010RTU Overview


This device has a DC current gain of 40 @ 3A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 500mA, 5A means Ic has reached its maximum value(saturated).There is no device package available from the supplier for this product.Detection of Collector Emitter Breakdown at 100V maximal voltage is present.

KSA1010RTU Features


the DC current gain for this device is 40 @ 3A 5V
the vce saturation(Max) is 600mV @ 500mA, 5A
the supplier device package of TO-220-3

KSA1010RTU Applications


There are a lot of ON Semiconductor KSA1010RTU applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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