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BC556BTA

BC556BTA

BC556BTA

ON Semiconductor

BC556BTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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BC556BTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount, Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240.007063mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -65V
Max Power Dissipation 500mW
Terminal Position BOTTOM
Current Rating -100mA
Frequency 150MHz
Base Part Number BC556
Number of Elements 1
Voltage 65V
Element Configuration Single
Current 1A
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 65V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 65V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 110
Height 4.58mm
Length 4.58mm
Width 3.86mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.163508 $0.163508
10 $0.154253 $1.54253
100 $0.145521 $14.5521
500 $0.137284 $68.642
1000 $0.129513 $129.513
BC556BTA Product Details

BC556BTA Overview


This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -250mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Input voltage breakdown is available at 65V volts.A maximum collector current of 100mA volts is possible.

BC556BTA Features


the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 150MHz

BC556BTA Applications


There are a lot of ON Semiconductor BC556BTA applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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