BC556BTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC556BTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Surface Mount, Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240.007063mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-65V
Max Power Dissipation
500mW
Terminal Position
BOTTOM
Current Rating
-100mA
Frequency
150MHz
Base Part Number
BC556
Number of Elements
1
Voltage
65V
Element Configuration
Single
Current
1A
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
65V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
110
Height
4.58mm
Length
4.58mm
Width
3.86mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.163508
$0.163508
10
$0.154253
$1.54253
100
$0.145521
$14.5521
500
$0.137284
$68.642
1000
$0.129513
$129.513
BC556BTA Product Details
BC556BTA Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -250mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Input voltage breakdown is available at 65V volts.A maximum collector current of 100mA volts is possible.
BC556BTA Features
the DC current gain for this device is 200 @ 2mA 5V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 650mV @ 5mA, 100mA the emitter base voltage is kept at 5V the current rating of this device is -100mA a transition frequency of 150MHz
BC556BTA Applications
There are a lot of ON Semiconductor BC556BTA applications of single BJT transistors.