DSA2002R0L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 150mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of -600mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 30mA, 300mA.For high efficiency, the continuous collector voltage must be kept at -500mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Single BJT transistor can be broken down at a voltage of 50V volts.Maximum collector currents can be below 500mA volts.
DSA2002R0L Features
the DC current gain for this device is 120 @ 150mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
a transition frequency of 160MHz
DSA2002R0L Applications
There are a lot of Panasonic Electronic Components DSA2002R0L applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
