NSS1C300ET4G Overview
This device has a DC current gain of 120 @ 1A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 400mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages should be kept at 3A to achieve high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.As you can see, the part has a transition frequency of 100MHz.The breakdown input voltage is 100V volts.Maximum collector currents can be below 3A volts.
NSS1C300ET4G Features
the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
NSS1C300ET4G Applications
There are a lot of ON Semiconductor NSS1C300ET4G applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
