BC558BTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC558BTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Max Power Dissipation
500mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-100mA
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC558
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
-30V
Emitter Base Voltage (VEBO)
-5V
hFE Min
110
Height
5.33mm
Length
5.2mm
Width
4.19mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.056576
$0.056576
500
$0.041600
$20.8
1000
$0.034667
$34.667
2000
$0.031804
$63.608
5000
$0.029724
$148.62
10000
$0.027650
$276.5
15000
$0.026741
$401.115
50000
$0.026294
$1314.7
BC558BTA Product Details
BC558BTA Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The emitter base voltage can be kept at -5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.150MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 30V volts.Maximum collector currents can be below 100mA volts.
BC558BTA Features
the DC current gain for this device is 200 @ 2mA 5V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 650mV @ 5mA, 100mA the emitter base voltage is kept at -5V the current rating of this device is -100mA a transition frequency of 150MHz
BC558BTA Applications
There are a lot of ON Semiconductor BC558BTA applications of single BJT transistors.