KSD261CYBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 180mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Maximum collector currents can be below 500mA volts.
KSD261CYBU Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
KSD261CYBU Applications
There are a lot of ON Semiconductor KSD261CYBU applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
