2SB1237TV2Q Overview
In this device, the DC current gain is 120 @ 100mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -200mV, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).150MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 1A volts.
2SB1237TV2Q Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
2SB1237TV2Q Applications
There are a lot of ROHM Semiconductor 2SB1237TV2Q applications of single BJT transistors.
- Interface
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- Muting
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- Inverter
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- Driver
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