BC80740MTF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -700mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.The base voltage of the emitter can be kept at -5V to achieve high efficiency.In the part, the transition frequency is 100MHz.Breakdown input voltage is 45V volts.During maximum operation, collector current can be as low as 800mA volts.
BC80740MTF Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80740MTF Applications
There are a lot of ON Semiconductor BC80740MTF applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
