BC817-16LT3 Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As a result, the part has a transition frequency of 100MHz.Collector current can be as low as 500mA volts at its maximum.
BC817-16LT3 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-16LT3 Applications
There are a lot of ON Semiconductor BC817-16LT3 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
