MPS4126RLRA Overview
In this device, the DC current gain is 120 @ 2mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -400mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 50mA.An emitter's base voltage can be kept at 4V to gain high efficiency.This device has a current rating of -200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 170MHz in the part.As a result, it can handle voltages as low as 25V volts.Maximum collector currents can be below 200mA volts.
MPS4126RLRA Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is -200mA
a transition frequency of 170MHz
MPS4126RLRA Applications
There are a lot of ON Semiconductor MPS4126RLRA applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
