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2SA2039-TL-H

2SA2039-TL-H

2SA2039-TL-H

ON Semiconductor

2SA2039-TL-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SA2039-TL-H Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 800mW
Base Part Number 2SA2039
Power - Max 800mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 430mV
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 430mV @ 100mA, 2A
Collector Emitter Breakdown Voltage 50V
Frequency - Transition 360MHz
Emitter Base Voltage (VEBO) 6V
hFE Min 200
RoHS Status ROHS3 Compliant
Lead Free Lead Free
2SA2039-TL-H Product Details

2SA2039-TL-H Overview


This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 430mV @ 100mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

2SA2039-TL-H Features


the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 430mV @ 100mA, 2A
the emitter base voltage is kept at 6V

2SA2039-TL-H Applications


There are a lot of ON Semiconductor 2SA2039-TL-H applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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