2SA2039-TL-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SA2039-TL-H Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
800mW
Base Part Number
2SA2039
Power - Max
800mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
430mV
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
430mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
360MHz
Emitter Base Voltage (VEBO)
6V
hFE Min
200
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
2SA2039-TL-H Product Details
2SA2039-TL-H Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 430mV @ 100mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
2SA2039-TL-H Features
the DC current gain for this device is 200 @ 500mA 2V the vce saturation(Max) is 430mV @ 100mA, 2A the emitter base voltage is kept at 6V
2SA2039-TL-H Applications
There are a lot of ON Semiconductor 2SA2039-TL-H applications of single BJT transistors.