BC817-40WT1G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In the part, the transition frequency is 100MHz.A maximum collector current of 500mA volts can be achieved.

BC817-40WT1G Features

the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC817-40WT1G Applications

There are a lot of ON Semiconductor BC817-40WT1G applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver