ZXTP2012ZTA Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 1V.The collector emitter saturation voltage is -160mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -4.3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.Its current rating is -4.3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 120MHz.There is a breakdown  input voltage of 60V volts that it can take.In extreme cases, the collector current can be as low as -4.3A volts.

ZXTP2012ZTA Features

the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -160mV
the vce saturation(Max) is 215mV @ 500mA, 5A
the emitter base voltage is kept at -7V
the current rating of this device is -4.3A
a transition frequency of 120MHz

ZXTP2012ZTA Applications

There are a lot of Diodes Incorporated ZXTP2012ZTA applications of single BJT transistors.

• Driver

• Muting

• Interface

• Inverter