2SD1815S-TL-E Overview

In this device, the DC current gain is 70 @ 500mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 150mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 150mA, 1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Single BJT transistor can be broken down at a voltage of 100V volts.During maximum operation, collector current can be as low as 3A volts.

2SD1815S-TL-E Features

the DC current gain for this device is 70 @ 500mA 5V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V

2SD1815S-TL-E Applications

There are a lot of ON Semiconductor 2SD1815S-TL-E applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter