BC857CLT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC857CLT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 6 days ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn80Pb20)
Subcategory
Other Transistors
Voltage - Rated DC
-45V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-100mA
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
650mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-650mV
Collector Base Voltage (VCBO)
-30V
Emitter Base Voltage (VEBO)
5V
hFE Min
420
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.037210
$0.03721
500
$0.027360
$13.68
1000
$0.022800
$22.8
2000
$0.020917
$41.834
5000
$0.019549
$97.745
10000
$0.018185
$181.85
15000
$0.017587
$263.805
50000
$0.017293
$864.65
BC857CLT1 Product Details
BC857CLT1 Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -650mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.In the part, the transition frequency is 100MHz.Maximum collector currents can be below 100mA volts.
BC857CLT1 Features
the DC current gain for this device is 420 @ 2mA 5V a collector emitter saturation voltage of -650mV the vce saturation(Max) is 650mV @ 5mA, 100mA the emitter base voltage is kept at 5V the current rating of this device is -100mA a transition frequency of 100MHz
BC857CLT1 Applications
There are a lot of ON Semiconductor BC857CLT1 applications of single BJT transistors.