BC859BLT1 Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.100MHz is present in the transition frequency.When collector current reaches its maximum, it can reach 100mA volts.
BC859BLT1 Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC859BLT1 Applications
There are a lot of ON Semiconductor BC859BLT1 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
