BC859BLT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC859BLT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 18 hours ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-100mA
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
BC859
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
650mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-650mV
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
5V
hFE Min
150
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.303102
$0.303102
10
$0.285946
$2.85946
100
$0.269760
$26.976
500
$0.254491
$127.2455
1000
$0.240085
$240.085
BC859BLT1 Product Details
BC859BLT1 Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.100MHz is present in the transition frequency.When collector current reaches its maximum, it can reach 100mA volts.
BC859BLT1 Features
the DC current gain for this device is 220 @ 2mA 5V a collector emitter saturation voltage of -650mV the vce saturation(Max) is 650mV @ 5mA, 100mA the emitter base voltage is kept at 5V the current rating of this device is -100mA a transition frequency of 100MHz
BC859BLT1 Applications
There are a lot of ON Semiconductor BC859BLT1 applications of single BJT transistors.