SS8550BBU Overview
In this device, the DC current gain is 85 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -280mV.When VCE saturation is 500mV @ 80mA, 800mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1.5A.In this part, there is a transition frequency of 200MHz.As a result, it can handle voltages as low as 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
SS8550BBU Features
the DC current gain for this device is 85 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz
SS8550BBU Applications
There are a lot of ON Semiconductor SS8550BBU applications of single BJT transistors.
- Muting
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- Inverter
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- Interface
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- Driver
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