MPS6652RLRA Overview
This device has a DC current gain of 50 @ 500mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 600mV allows maximum design flexibility.When VCE saturation is 600mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 4V allows for a high level of efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 100MHz in the part.The maximum collector current is 1A volts.
MPS6652RLRA Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is -1A
a transition frequency of 100MHz
MPS6652RLRA Applications
There are a lot of ON Semiconductor MPS6652RLRA applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
