BCW33LT1G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 420 @ 2mA 5V.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 500μA, 10mA.Emitter base voltages of 5V can achieve high levels of efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 32V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BCW33LT1G Features

the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA

BCW33LT1G Applications

There are a lot of ON Semiconductor BCW33LT1G applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver