Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BD681G

BD681G

BD681G

ON Semiconductor

BD681G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD681G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 1995
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation40W
Peak Reflow Temperature (Cel) 260
Current Rating4A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BD681
Pin Count3
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation40W
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage100V
Collector Emitter Saturation Voltage2.5V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 750
Height 11.04mm
Length 7.74mm
Width 2.66mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7858 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.73000$0.73
10$0.64300$6.43
100$0.49690$49.69
500$0.39618$198.09

BD681G Product Details

BD681G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 1.5A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).When collector current reaches its maximum, it can reach 4A volts.

BD681G Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A

BD681G Applications


There are a lot of ON Semiconductor BD681G applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

Get Subscriber

Enter Your Email Address, Get the Latest News