DNLS412E-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DNLS412E-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Package / Case
SOT-223
Number of Pins
4
Weight
7.994566mg
Packaging
Tape & Reel (TR)
Published
2008
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Frequency
150MHz
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
1W
Gain Bandwidth Product
150MHz
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
4A
Collector Emitter Breakdown Voltage
12V
Transition Frequency
150MHz
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
12V
Emitter Base Voltage (VEBO)
5V
hFE Min
500
Height
1.6mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.579200
$4.5792
10
$4.320000
$43.2
100
$4.075472
$407.5472
500
$3.844785
$1922.3925
1000
$3.627155
$3627.155
DNLS412E-13 Product Details
DNLS412E-13 Overview
A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The part has a transition frequency of 150MHz.This device can take an input voltage of 12V volts before it breaks down.During maximum operation, collector current can be as low as 4A volts.
DNLS412E-13 Features
the emitter base voltage is kept at 5V a transition frequency of 150MHz
DNLS412E-13 Applications
There are a lot of Diodes Incorporated DNLS412E-13 applications of single BJT transistors.