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DNLS412E-13

DNLS412E-13

DNLS412E-13

Diodes Incorporated

DNLS412E-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DNLS412E-13 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case SOT-223
Number of Pins 4
Weight 7.994566mg
Packaging Tape & Reel (TR)
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1W
Frequency 150MHz
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 1W
Gain Bandwidth Product 150MHz
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 4A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 150MHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 12V
Emitter Base Voltage (VEBO) 5V
hFE Min 500
Height 1.6mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.579200 $4.5792
10 $4.320000 $43.2
100 $4.075472 $407.5472
500 $3.844785 $1922.3925
1000 $3.627155 $3627.155
DNLS412E-13 Product Details

DNLS412E-13 Overview


A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The part has a transition frequency of 150MHz.This device can take an input voltage of 12V volts before it breaks down.During maximum operation, collector current can be as low as 4A volts.

DNLS412E-13 Features


the emitter base voltage is kept at 5V
a transition frequency of 150MHz

DNLS412E-13 Applications


There are a lot of Diodes Incorporated DNLS412E-13 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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