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BCX70J

BCX70J

BCX70J

ON Semiconductor

BCX70J datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BCX70J Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 39 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 59.987591mg
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 200mA
Frequency 125MHz
Base Part Number BCX70
Number of Elements 1
Voltage 45V
Element Configuration Single
Current 1A
Power Dissipation 350mW
Gain Bandwidth Product 125MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage 550mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
hFE Min 250
Turn Off Time-Max (toff) 800ns
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
BCX70J Product Details

BCX70J Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 2mA 5V.A collector emitter saturation voltage of 550mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 550mV @ 1.25mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.There is a transition frequency of 125MHz in the part.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

BCX70J Features


the DC current gain for this device is 250 @ 2mA 5V
a collector emitter saturation voltage of 550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 125MHz

BCX70J Applications


There are a lot of ON Semiconductor BCX70J applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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