BCX70J datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BCX70J Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
39 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 5 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
59.987591mg
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
200mA
Frequency
125MHz
Base Part Number
BCX70
Number of Elements
1
Voltage
45V
Element Configuration
Single
Current
1A
Power Dissipation
350mW
Gain Bandwidth Product
125MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 2mA 5V
Current - Collector Cutoff (Max)
20nA
Vce Saturation (Max) @ Ib, Ic
550mV @ 1.25mA, 50mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
125MHz
Collector Emitter Saturation Voltage
550mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
5V
hFE Min
250
Turn Off Time-Max (toff)
800ns
Height
6.35mm
Length
6.35mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
BCX70J Product Details
BCX70J Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 2mA 5V.A collector emitter saturation voltage of 550mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 550mV @ 1.25mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.There is a transition frequency of 125MHz in the part.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
BCX70J Features
the DC current gain for this device is 250 @ 2mA 5V a collector emitter saturation voltage of 550mV the vce saturation(Max) is 550mV @ 1.25mA, 50mA the emitter base voltage is kept at 5V the current rating of this device is 200mA a transition frequency of 125MHz
BCX70J Applications
There are a lot of ON Semiconductor BCX70J applications of single BJT transistors.