BD13816S Overview

In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at -5V, an efficient operation can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1.5A.Maximum collector currents can be below 1.5A volts.

BD13816S Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A

BD13816S Applications

There are a lot of ON Semiconductor BD13816S applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface