MCH6122-TL-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MCH6122-TL-H Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Lifecycle Status
LIFETIME (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Number of Pins
6
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
1W
Pin Count
6
Power - Max
1W
Halogen Free
Halogen Free
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
180mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
180mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage
30V
Frequency - Transition
400MHz
Emitter Base Voltage (VEBO)
-5V
hFE Min
200
RoHS Status
RoHS Compliant
Lead Free
Lead Free
MCH6122-TL-H Product Details
MCH6122-TL-H Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at -5V to achieve high efficiency.A maximum collector current of 3A volts is possible.
MCH6122-TL-H Features
the DC current gain for this device is 200 @ 500mA 2V the vce saturation(Max) is 180mV @ 75mA, 1.5A the emitter base voltage is kept at -5V
MCH6122-TL-H Applications
There are a lot of ON Semiconductor MCH6122-TL-H applications of single BJT transistors.