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MCH6122-TL-H

MCH6122-TL-H

MCH6122-TL-H

ON Semiconductor

MCH6122-TL-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MCH6122-TL-H Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Lifecycle Status LIFETIME (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 6
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 1W
Pin Count 6
Power - Max 1W
Halogen Free Halogen Free
Transistor Type PNP
Collector Emitter Voltage (VCEO) 180mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 180mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage 30V
Frequency - Transition 400MHz
Emitter Base Voltage (VEBO) -5V
hFE Min 200
RoHS Status RoHS Compliant
Lead Free Lead Free
MCH6122-TL-H Product Details

MCH6122-TL-H Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at -5V to achieve high efficiency.A maximum collector current of 3A volts is possible.

MCH6122-TL-H Features


the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 180mV @ 75mA, 1.5A
the emitter base voltage is kept at -5V

MCH6122-TL-H Applications


There are a lot of ON Semiconductor MCH6122-TL-H applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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