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2SB1481(TOJS,Q,M)

2SB1481(TOJS,Q,M)

2SB1481(TOJS,Q,M)

Toshiba Semiconductor and Storage

TRANS PNP 4A 100V TO220-3

SOT-23

2SB1481(TOJS,Q,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220NIS
Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 3A 2V
Current - Collector Cutoff (Max) 2μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 6mA, 3A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 4A

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