BD159G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD159G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
350V
Max Power Dissipation
20W
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BD159
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
20W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
350V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
100μA ICBO
Collector Emitter Breakdown Voltage
100V
Transition Frequency
6MHz
Max Breakdown Voltage
350V
Collector Base Voltage (VCBO)
375V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.56000
$0.56
10
$0.47700
$4.77
100
$0.35600
$35.6
500
$0.27974
$139.87
BD159G Product Details
BD159G Overview
In this device, the DC current gain is 30 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.A transition frequency of 6MHz is present in the part.Breakdown input voltage is 350V volts.During maximum operation, collector current can be as low as 500mA volts.
BD159G Features
the DC current gain for this device is 30 @ 50mA 10V the emitter base voltage is kept at 5V the current rating of this device is 500mA a transition frequency of 6MHz
BD159G Applications
There are a lot of ON Semiconductor BD159G applications of single BJT transistors.