MJD44H11T5 Overview

This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.Single BJT transistor contains a transSingle BJT transistorion frequency of 85MHz.During maximum operation, collector current can be as low as 8A volts.

MJD44H11T5 Features

the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 85MHz

MJD44H11T5 Applications

There are a lot of ON Semiconductor MJD44H11T5 applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting