BD239CTU Overview

In this device, the DC current gain is 15 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

BD239CTU Features

the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A

BD239CTU Applications

There are a lot of ON Semiconductor BD239CTU applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting