2SC4102T106S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SC4102T106S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
25V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
50mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SC4102
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
140MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA 6V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
120V
Transition Frequency
140MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
120V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
hFE Min
180
Continuous Collector Current
50mA
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.028287
$0.028287
500
$0.020799
$10.3995
1000
$0.017333
$17.333
2000
$0.015902
$31.804
5000
$0.014861
$74.305
10000
$0.013824
$138.24
15000
$0.013370
$200.55
50000
$0.013147
$657.35
2SC4102T106S Product Details
2SC4102T106S Overview
This device has a DC current gain of 180 @ 2mA 6V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 50mA in order to achieve high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 50mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Single BJT transistor can be broken down at a voltage of 120V volts.During maximum operation, collector current can be as low as 50mA volts.
2SC4102T106S Features
the DC current gain for this device is 180 @ 2mA 6V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 1mA, 10mA the emitter base voltage is kept at 5V the current rating of this device is 50mA a transition frequency of 140MHz
2SC4102T106S Applications
There are a lot of ROHM Semiconductor 2SC4102T106S applications of single BJT transistors.