2SC4102T106S Overview
This device has a DC current gain of 180 @ 2mA 6V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 50mA in order to achieve high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 50mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Single BJT transistor can be broken down at a voltage of 120V volts.During maximum operation, collector current can be as low as 50mA volts.
2SC4102T106S Features
the DC current gain for this device is 180 @ 2mA 6V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 140MHz
2SC4102T106S Applications
There are a lot of ROHM Semiconductor 2SC4102T106S applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
