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2SC4102T106S

2SC4102T106S

2SC4102T106S

ROHM Semiconductor

2SC4102T106S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SC4102T106S Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 50mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SC4102
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 140MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 6V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 120V
Transition Frequency 140MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 180
Continuous Collector Current 50mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.028287 $0.028287
500 $0.020799 $10.3995
1000 $0.017333 $17.333
2000 $0.015902 $31.804
5000 $0.014861 $74.305
10000 $0.013824 $138.24
15000 $0.013370 $200.55
50000 $0.013147 $657.35
2SC4102T106S Product Details

2SC4102T106S Overview


This device has a DC current gain of 180 @ 2mA 6V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 50mA in order to achieve high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 50mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Single BJT transistor can be broken down at a voltage of 120V volts.During maximum operation, collector current can be as low as 50mA volts.

2SC4102T106S Features


the DC current gain for this device is 180 @ 2mA 6V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 140MHz

2SC4102T106S Applications


There are a lot of ROHM Semiconductor 2SC4102T106S applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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