BD441G Overview
In this device, the DC current gain is 40 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 800mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 300mA, 3A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.In extreme cases, the collector current can be as low as 4A volts.
BD441G Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD441G Applications
There are a lot of ON Semiconductor BD441G applications of single BJT transistors.
- Driver
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- Interface
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- Inverter
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- Muting
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