BD442G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 500mA 1V.As it features a collector emitter saturation voltage of 800mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.The maximum collector current is 4A volts.

BD442G Features

the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 3MHz

BD442G Applications

There are a lot of ON Semiconductor BD442G applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface