Name: MMBT2222ALT1G
Brand: ON Semiconductor
SKU: MMBT2222ALT1G
Price: 0.18000 USD
Availability: InStock

new-10%

MMBT2222ALT1G

Manufacturer part number:MMBT2222ALT1G

Manufacturer:ON Semiconductor

Description:MMBT2222ALT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MMBT2222ALT1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Type	General Purpose
Subcategory	Other Transistors
Voltage - Rated DC	40V
Max Power Dissipation	300mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	600mA
Frequency	300MHz
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	MMBT2222A
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	225mW
Transistor Application	SWITCHING
Gain Bandwidth Product	300MHz
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	40V
Max Collector Current	600mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA 10V
Current - Collector Cutoff (Max)	10nA ICBO
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage	40V
Transition Frequency	300MHz
Collector Emitter Saturation Voltage	300mV
Max Breakdown Voltage	40V
Collector Base Voltage (VCBO)	75V
Emitter Base Voltage (VEBO)	6V
hFE Min	100
Max Junction Temperature (Tj)	150°C
Turn Off Time-Max (toff)	285ns
Height	1.11mm
Length	2.9mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free