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BD533J

BD533J

BD533J

ON Semiconductor

BD533J datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD533J Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD533
Power - Max 50W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 2A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 8A
Frequency - Transition 12MHz
BD533J Product Details

BD533J Overview


In this device, the DC current gain is 30 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 800mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Product package TO-220-3 comes from the supplier.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.

BD533J Features


the DC current gain for this device is 30 @ 2A 2V
the vce saturation(Max) is 800mV @ 200mA, 2A
the supplier device package of TO-220-3

BD533J Applications


There are a lot of ON Semiconductor BD533J applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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