BD533J datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD533J Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BD533
Power - Max
50W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 2A 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
8A
Frequency - Transition
12MHz
BD533J Product Details
BD533J Overview
In this device, the DC current gain is 30 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 800mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Product package TO-220-3 comes from the supplier.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.
BD533J Features
the DC current gain for this device is 30 @ 2A 2V the vce saturation(Max) is 800mV @ 200mA, 2A the supplier device package of TO-220-3
BD533J Applications
There are a lot of ON Semiconductor BD533J applications of single BJT transistors.