BD534K datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD534K Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BD534
Power - Max
50W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 2A 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
800mV @ 600mA, 6A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
8A
Frequency - Transition
12MHz
BD534K Product Details
BD534K Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 600mA, 6A.Supplier device package TO-220-3 comes with the product.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BD534K Features
the DC current gain for this device is 40 @ 2A 2V the vce saturation(Max) is 800mV @ 600mA, 6A the supplier device package of TO-220-3
BD534K Applications
There are a lot of ON Semiconductor BD534K applications of single BJT transistors.