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BD537K

BD537K

BD537K

ON Semiconductor

BD537K datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD537K Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD537
Power - Max 50W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 8A
Frequency - Transition 12MHz
In-Stock:2592 items

BD537K Product Details

BD537K Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 2A 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The product comes in the supplier device package of TO-220-3.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.

BD537K Features


the DC current gain for this device is 40 @ 2A 2V
the vce saturation(Max) is 800mV @ 200mA, 2A
the supplier device package of TO-220-3

BD537K Applications


There are a lot of ON Semiconductor BD537K applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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