BUJ100,126 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
BUJ100,126 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Base Part Number
BUJ100
Power - Max
2W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
9 @ 750mA 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1V @ 150mA, 750mA
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
1A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10,000
$0.10962
$1.0962
BUJ100,126 Product Details
BUJ100,126 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 9 @ 750mA 5V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 150mA, 750mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BUJ100,126 Features
the DC current gain for this device is 9 @ 750mA 5V the vce saturation(Max) is 1V @ 150mA, 750mA
BUJ100,126 Applications
There are a lot of WeEn Semiconductors BUJ100,126 applications of single BJT transistors.