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BUJ100,126

BUJ100,126

BUJ100,126

WeEn Semiconductors

BUJ100,126 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ100,126 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature150°C TJ
PackagingTape & Box (TB)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Base Part Number BUJ100
Power - Max 2W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 9 @ 750mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 150mA, 750mA
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 1A
RoHS StatusRoHS Compliant
In-Stock:4061 items

Pricing & Ordering

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BUJ100,126 Product Details

BUJ100,126 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 9 @ 750mA 5V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 150mA, 750mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

BUJ100,126 Features


the DC current gain for this device is 9 @ 750mA 5V
the vce saturation(Max) is 1V @ 150mA, 750mA

BUJ100,126 Applications


There are a lot of WeEn Semiconductors BUJ100,126 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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