MPS6601RLRA Overview
In this device, the DC current gain is 50 @ 500mA 1V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As a result, the part has a transition frequency of 100MHz.During maximum operation, collector current can be as low as 1A volts.
MPS6601RLRA Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is 1A
a transition frequency of 100MHz
MPS6601RLRA Applications
There are a lot of ON Semiconductor MPS6601RLRA applications of single BJT transistors.
- Inverter
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- Driver
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- Interface
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- Muting
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