BD538J datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD538J Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
50W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 2A 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
800mV @ 600mA, 6A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
8A
Frequency - Transition
12MHz
BD538J Product Details
BD538J Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 2A 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 600mA, 6A.The product comes in the supplier device package of TO-220-3.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
BD538J Features
the DC current gain for this device is 30 @ 2A 2V the vce saturation(Max) is 800mV @ 600mA, 6A the supplier device package of TO-220-3
BD538J Applications
There are a lot of ON Semiconductor BD538J applications of single BJT transistors.