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BD675G

BD675G

BD675G

ON Semiconductor

BD675G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD675G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) 260
Current Rating 4A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BD675
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 40W
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage 45V
Transition Frequency 1MHz
Collector Emitter Saturation Voltage 2.5V
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
hFE Min 750
Height 11.04mm
Length 7.74mm
Width 2.66mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.60000 $0.6
10 $0.51600 $5.16
100 $0.38540 $38.54
500 $0.30284 $151.42
1,000 $0.23401 $0.23401
BD675G Product Details

BD675G Overview


DC current gain in this device equals 750 @ 1.5A 3V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As you can see, the part has a transition frequency of 1MHz.During maximum operation, collector current can be as low as 4A volts.

BD675G Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 1MHz

BD675G Applications


There are a lot of ON Semiconductor BD675G applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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