BD676AS datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD676AS Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-45V
Max Power Dissipation
14W
Current Rating
-4A
Base Part Number
BD676
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
14W
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.8V @ 40mA, 2A
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
2.8V
Collector Base Voltage (VCBO)
-45V
Emitter Base Voltage (VEBO)
-5V
hFE Min
750
Continuous Collector Current
-4A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.086028
$0.086028
500
$0.063256
$31.628
1000
$0.052713
$52.713
2000
$0.048361
$96.722
5000
$0.045196
$225.98
10000
$0.042044
$420.44
15000
$0.040661
$609.915
50000
$0.039982
$1999.1
BD676AS Product Details
BD676AS Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 2A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.8V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.8V @ 40mA, 2A.Single BJT transistor is recommended to keep the continuous collector voltage at -4A in order to achieve high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The maximum collector current is 4A volts.
BD676AS Features
the DC current gain for this device is 750 @ 2A 3V a collector emitter saturation voltage of 2.8V the vce saturation(Max) is 2.8V @ 40mA, 2A the emitter base voltage is kept at -5V the current rating of this device is -4A
BD676AS Applications
There are a lot of ON Semiconductor BD676AS applications of single BJT transistors.