BD676AS Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 2A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.8V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.8V @ 40mA, 2A.Single BJT transistor is recommended to keep the continuous collector voltage at -4A in order to achieve high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The maximum collector current is 4A volts.
BD676AS Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
BD676AS Applications
There are a lot of ON Semiconductor BD676AS applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
