BD678AS datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD678AS Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
14W
Current Rating
-4A
Base Part Number
BD678
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power - Max
14W
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.8V @ 40mA, 2A
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
2.8V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-5V
hFE Min
750
Continuous Collector Current
-4A
Height
11mm
Length
8mm
Width
3.25mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.64000
$0.64
10
$0.56400
$5.64
100
$0.43250
$43.25
500
$0.34188
$170.94
BD678AS Product Details
BD678AS Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.8V, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.8V @ 40mA, 2A.For high efficiency, the continuous collector voltage must be kept at -4A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A maximum collector current of 4A volts can be achieved.
BD678AS Features
the DC current gain for this device is 750 @ 2A 3V a collector emitter saturation voltage of 2.8V the vce saturation(Max) is 2.8V @ 40mA, 2A the emitter base voltage is kept at -5V the current rating of this device is -4A
BD678AS Applications
There are a lot of ON Semiconductor BD678AS applications of single BJT transistors.